Samsung is reportedly working on redesigning its 6th-generation 1c DRAM to boost yield rates, aiming to get a competitive edge over its forthcoming HBM4 process.
## Why Samsung’s 1c DRAM Redesign Matters
Samsung is considering a significant overhaul of its 1c DRAM process with the hope that it will be a cornerstone for the success of its HBM4 technology. According to ZDNet Korea, Samsung has been examining new designs for its state-of-the-art DRAM processes since the second half of 2024. The company has now made changes to its high-performance 1c DRAM, aiming to ensure industry-wide adoption of its new HBM processes—something that HBM3 couldn’t achieve due to significant challenges in integration with major players like NVIDIA.
A recent report highlights that Samsung’s advanced DRAM process didn’t hit the expected yield rates, which were projected to be between 60% and 70%. This shortfall is largely due to the chip size in their 1c DRAM. Initially, Samsung concentrated on reducing the size to ramp up production volumes, but this came at the cost of process stability, resulting in lower yields.
As explained by ZDNet Korea, “Samsung Electronics has modified its 1c DRAM design to enlarge the chip size, prioritizing yield improvements with a target set for mid-year. It looks like they are emphasizing the stable mass production of next-gen memory even if it takes additional costs.”
This iteration of the 1c DRAM is crucial for the performance of Samsung’s HBM4 products. With competitors like SK Hynix and Micron having already fine-tuned their designs, Samsung is on a tight schedule. Past issues, especially the HBM3 debacle, make it all the more critical for Samsung to align its 1c DRAM process with industry benchmarks.
Currently, there’s a bit of a question mark over the future of Samsung’s 6th-generation DRAM process. But we’re likely to see some developments in the months ahead that could set Samsung’s HBM4 process on the path to mass production, anticipated by the year’s end.
